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Seminars»02.01.2014 - Ferhat Katmis : Lattice-Symmetry and Electronic Anisotropy in Topological Insulators Thin Films and Heterostructures

02.01.2014 - Ferhat Katmis : Lattice-Symmetry and Electronic Anisotropy in Topological Insulators Thin Films and Heterostructures

Lattice-Symmetry and Electronic Anisotropy in Topological Insulators Thin Films and Heterostructures

Ferhat Katmis
Quantum Nanoelectronics, MIT, USA
02 January 2014, Thursday, 14:40
Cavid Erginsoy Seminar Room, Physics Department, 3rd floor

Abstract: Besides the theoretical interest of topological insulators (TIs), the attractive direction of research is to explore the intrinsic features, and not only understand but also to correlate structure with the exotic electronic properties as well as interaction with other material classes, e.g. ferromagnetic, superconducting materials. To observe the intrinsic properties of TI thin films, molecular beam epitaxy ideally allows us to engineer the system to obtain optimum Dirac surface states, understand how transport is defined by the atomic arrangement and structure using different experimental techniques. In TI heterostructures with ferromagnets, the observation of symmetry breaking strongly depends on the interface coupling between FI and TI, where the exchange interaction occurs.