Prof. Dr. Nizami HASANLİ Tel: 0 (312) 210 5054 Fax: 0 (312) 210 5099 Room: 229 e-mail: nizami@metu.edu.tr www: Not available Address: Orta Dogu Teknik Üniversitesi Fizik Bolumu 06531 Ankara TURKIYE
1972, Ph.D., Leningrad Physico-Technical Institute, Russia
1963, M.Sc., Baku State Uuniversity, Azerbaijan
1962, B.Sc., Baku State Uuniversity, Azerbaijan

Main Interest

Investigation of Raman Scattering in A3B6-type Layered Single Crystals. Study of the Temperature and Excitation Intensity Dependence of Photoluminescence in Layered Crystals. Effect of Magnetic Field, Temperature, Doping and Gamma Irradiation on Structural and Electrical Properties of Superconducting Ceramics and Tapes. Thermally Stimulated Conductivity in Layered Crystals.

Recent or Key Publications

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• artıcle 1. N.M. Gasanly, A. Serpenguzel, A. Aydinli and S.M.A. Baten. Low Temperature Visible Photoluminescence Spectra of TlGaSe2 Layered Crystal. J. Luminescence vol. 86 , No. 1 , 39-43 (2000).
• artıcle 2. H. Ozkan, N. Gasanly and T. Kayed. Effect of Magnetic Field and g Irradiation on the Electrical Properties and Structure of the Tl-Based Ceramic Superconductors. Supercond. Sci. Technol. vol. 13 , No. 2 , 161-164 (2000).
• artıcle 3. N.M. Gasanly, H. Ozkan and M. Tas. Composition Dependence of Lattice Anisotropy of TlBX2 -type Chain Mixed Crystals. Crystal Res. Technol. vol. 35 , No. 2 , 185-188 (2000).
• artıcle 4. N.M. Gasanly, A. Aydinli, H. Ozkan, C. Kocabas. Temperature Dependence of the First-order Raman Scattering in GaS Layered Crystals.. Solid State Commun. vol. 116 , No. 3 , 147-151 (2000).
• artıcle 5. A. Aydinli, N.M. Gasanly, K. Goksen. Donor-acceptor Pair Recombination in Gallium Sulfide. J. Appl. Phys. vol. 88 , No. 12 , 7144-7149 (2000).
• artıcle 6. T. Kayed, H. Ozkan, N. M. Gasanly, I. Ercan. Critical Currents of Bi-223 Tapes Near Tc under Magnetic Field and g Irradiation. Supercond. Sci. Technol. vol. 33 , No. 12, 1625-1628 (2000).
• artıcle 7. N.M. Gasanly , A. Aydinli, O. Salihoglu. Thermally Stimulated Current Observation of Trapping Centers in Undoped GaSe Layered Single Crystals. Crystal Res. Technol. , vol. 36 , No. 3 , 295-301 (2001).
• artıcle 8. A.M. Panich and N.M. Gasanly. Indirect Nuclear Exchange Coupling and Electronic Structure of Chain Semiconductor TlSe: 203Tl and 205Tl NMR Study. Phys. Rev. B , vol. 63 , No. 19 , 195201 (2001).
• artıcle 9. A. F. Qasrawi and N.M. Gasanly. Crystal Data, Electrical Resistivity, and Hall Mobility of n-type AgIn5S8 Single Crystals. Crystal Res. Technol. , vol. 36 , No. 4-5 , 457-464 (2001).
• artıcle 10. A. Aydinli, N.M. Gasanly , and K. Goksen. Low-temperature Photoluminescence Study of GaS0.5Se0.5 Layered Crystals. Mat. Res. Bull. , vol. 36 , No. 10 , 1823-1832 (2001).
• artıcle 11. N.M. Gasanly , A. Aydinli, and H. Ozkan. Resonant Raman scattering near the free-to-bound transition in undoped p-GaSe Crystal Res. Technol. , vol. 36 , No. 12 , 1393-1398 (2001).
• artıcle 12. T.S. Kayed, H. Ozkan, and N.M. Gasanly. Effect of Lithium Doping on the Properties of Tl-based Superconductors. Supercond. Sci. Technol. , vol. 14 , No. 9 , 738-740 (2001).
• artıcle 13. A. F. Qasrawi and N.M. Gasanly. Crystal Data, Photoconductivity and Carrier Mechanisms in CuIn5S8 Single Crystals. Crystal Res. Technol. , vol. 36 , No. 12 , 1399-1410 (2001).
• artıcle 14. A. Aydinli, N.M. Gasanly , and K. Goksen. Defect Luminescence in Undoped p-GaSe. Phil. Mag. Lett. , vol. 81 , No. 12 , 859-867 (2001).
• artıcle 15. N.M. Gasanly , A. Aydinli, H. Ozkan and C. Kocabas. Temperature-dependent Raman Scattering Spectra of e-GaSe Layered Crystal. Mat. Res. Bull. , vol. 37 , No. 1, 169-176 (2002).
• artıcle 16. N.M. Gasanly, K. Goksen and H. Ozkan. Photoluminescence Spectra of GaS0.75Se0.25 Layered Single Crystals. Crystal Res. Technol. , vol. 37 , No. 6 , 581-586 (2002).
• artıcle 17. N.M. Gasanly , A. Aydinli, C. Kocabas and H. Ozkan. Anharmonicity of Zone-center Optical Phonons: Raman Scattering Spectra of GaS0.5Se0.5 Layered Crystal. Physica Scripta , vol. 65 , No. 6 , 534-538 (2002).
• artıcle 18. A. F. Qasrawi and N.M. Gasanly. Carrier Scattering Mechanisms in GaS0.5Se0.5 Layered Crystals. Crystal Res. Technol. , vol. 37 , No. 6 , 587-594 (2002).
• artıcle 19. A. F. Qasrawi and N.M. Gasanly. Investigation of Localized Levels in GaS0.5Se0.5 Layered Crystals by Means of Electrical, Space-Charge Limited Current and Photoconductivity Measurements. Phys. Stat. Sol. (a), vol. 194 , No. 1 , 81-88 (2002).
• artıcle 20. N.M. Gasanly , A. Aydinli. Low-temperature Raman Scattering Spectra of GaSexS1-x Layered Mixed Crystal. Crystal Res. Technol. , vol. 37, No. 9, 1011-1017 (2002).
• artıcle 21. A. F. Qasrawi and N.M. Gasanly. Carrier Transport Properties of InS Single Crystals Crystal Res. Technol. , vol. 37 , No. 10 , 1104-1112 (2002).
• artıcle 22. N.M. Gasanly Temperature Dependence of the First-order Raman Phonon Lines in GaS0.25Se075 Layered Crystals Acta Physica Polonica A , vol. 102, No. 6 , 703-712 (2002).
• artıcle 23. N.M. Gasanly and R. Pala Anharmonic Line Shift and Linewidth of the Raman Modes in GaS0.75Se0.25 Layered Crystals Phys. Stat. Sol. (b) , vol. 234, No. 2, 665-673 (2002).
• artıcle 24. A. Aydinli and N.M. Gasanly Defect Luminescence in Some Layered Binary Chalcogenide Semiconductots. Defect and Diffusion Forum, vol. 210-212, No. 1, 61-69 (2002).
• artıcle 25. A. Aydinli, N.M. Gasanly, A. Uka, H. Efeoglu. Anharmonicity in GaTe Layered Crystals. Crystal Res. Technol. , vol. 37, No. 12, 1303-1309 (2002).
• artıcle 26. A.F. Qasrawi and N.M. Gasanly. Optoelectronic and Electrical Properties of InS Crystals. Semicond. Sci. Technol. , vol. 17, No. 1288-1292 (2002).
• artıcle 27. N.M. Gasanly, A. Aydinli, and N.S. Yuksek. Temperature- and Excitation Intensity-dependent Photoluminescence in TlInSeS Single Crystals. J. Phys.: Condensed Matter. , vol. 14, No. 49, 13685-13692 (2002).
• artıcle 28. N. M. Gasanly, A. Aydinli and N. S. Yuksek. Thermally Stimulated Currents in n-InS Single Crystals. Mat. Res. Bull., vol. 38, No. 4, 699-704 (2003).
• artıcle 29. S. Ozdemir, N. M. Gasanly and M. Bucurgat. Trap Levels in Layered Semiconductor TlInS1. 9 Se 0. 1 . Phys. Stat. Sol. (a) , vol. 196, No. 2, 422-428 (2003).
• artıcle 30. N. M. Gasanly , A. Aydinli, N. S. Yuksek and O. Salihoglu. Trapping Centers in Undoped GaS Layered Single Crystals. Appl. Phys. A; Mat. Sci. Proces., vol. 77, No. 3-4, 603-606 (2003).
• artıcle 31. S. E. Ogun, H. Ozkan and N. M. Gasanly. Effect of LiCO3 Doping on the Properties of Bi-based Superconductors. IEEE Transact. Appl. Supercond., vol. 13, No. 2 , 3158-3160 (2003
• artıcle 32. N. S. Yuksek , N. M. Gasanly and H.Ozkan. TSC Analysis of Shallow Levels in TlGaS2 Layered Single Crystals. Semicond. Sci. Tech., vol. 18, No. 9, 834-838 (2003).
• artıcle 33. A. F. Qasrawi and N. M. Gasanly. Photoelectronic, Optical, and Electrical Properties of TlInS2 Single Crystals. Phys. Status Solidi (a), vol. 199, No. 2, 277-283 (2003).
• artıcle 34. S. Cavdar, E. Aksu, H. Koralay, H. Ozkan, N. M. Gasanly and I. Ercan. Effect of B2O3 Addition on the Formation and Properties of Tl-2212 and Tl-2223 Superconductors. Phys. Status Solidi (a), vol. 199, No. 2, 272-276 (2003).
• artıcle 35. N. M. Gasanly. Effect of Crystal Disorder on Line Width Broadening of Phonon Modes in GaS1-x Sex Layered Mixed Crystals. Crystal Res. Technol. , vol. 38 , No. 11, 962-967 (2003).
• artıcle 36. A. F. Qasrawi and N. M. Gasanly. Photoelectronic and Electrical Properties of CuIn5S8 Single Crystals. Crystal Res. Technol., vol. 38 , No. 12, 1063-1070 (2003).
• artıcle 37. N. S. Yuksek , N. M. Gasanly and A. Aydinli. Anharmonic Line Shift and Linewidth of the Raman Modes in TlInS2 Layered Crystals. J. Raman Spectroscopy, vol. 35, No. 1, 55-60 (2004).
• artıcle 38. N.S. Yuksek, H. Kavas, N.M. Gasanly and H. Ozkan. Trapping Center Parameters of TlGaSe2 Layered Crystals. Physica B , vol. 344, No. 1-4 , 249-254 (2004).
• artıcle 39. A. F. Qasrawi and N. M. Gasanly. Hall effect, Space-charged Limited Current and Photoconductivity Measurements on TlGaSe2 Layered Crystals. Semicond. Sci. Tech., vol. 19, No. 3, 505-509 (2004).
• artıcle 40. A. F. Qasrawi and N. M. Gasanly. Investigation of Carrier Scattering Mechanisms in TlInS2 Single Crystals by Hall Effect Measurements. Crystal Res. Technol., vol. 39 , No. 5, 439-447 (2004).
• artıcle 41. A. F. Qasrawi and N. M. Gasanly. Electrical Conductivity and Hall Mobility in p-type TlGaSe2 Crystals. Mat. Res. Bull., vol. 39, No. 9, 1351-1357 (2004).
• artıcle 42. N.S. Yuksek, N.M. Gasanly , A. Aydinli, H. Ozkan and M. Acikgoz. Infrared Photoluminescence from TlGaS2 Layered Single Crystals. Crystal Res. Technol., vol. 39 , No. 9, 800-806 (2004).
• artıcle 43. A.M. Panich, D.C. Ailion, S. Kashida and N. M. Gasanly. Gallium and Thallium NMR Study of Phase Transitions and Incommensurability in the Layered Semiconductor TlGaSe2 . Phys. Rev. B , vol. 69, No. 245319 (2004).
• artıcle 44. N. S. Yuksek, N. M. Gasanly, H. Ozkan and A. Aydinli. Temperature Dependence of Raman-active Modes of TlGaS2 Layered Crystals: an Anharmonicity Study. Journal of the Korean Physical Society, vol. 45, No. 2, 501-506 (2004).
• artıcle 45. N.S. Yuksek, N.M. Gasanly , H. Ozkan and O. Karci. Trapping Center Parameters of TlInS2 layered Crystals by Thermally Stimulated Current Measurements. Acta Physica Polonica A, vol. 106, No. 1, 95-103 (2004).
• artıcle 46. S. Aytekin, N. S. Yuksek, N. M. Gasanly , M. Goktepe and A. Aydinli. Thermally Stimulated Currents in Layered Ga4SeS3 Semiconductor. Phys. Stat. Solidi (a), vol. 201, No. 13, 2980-2985 (2004).